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triquint semiconductor: www. triquint.com (972)994-8465 fax (972)994-8504 info-mmw@tqs.com 1 TGA4030-SM jul 2007 ? rev - datasheet subject to change without notice. primary applications product description key features measured performance 17 ? 3 7 ghz mpa/multiplier ? r f outpu t f r eque nc y ran ge: 17 - 37 gh z ? 20 db no mina l ga in ? 22 dbm nominal out p ut maximum p o wer ? 2 x and 3 x multip lie r func tion ? bias : vd = 5v, id = 140ma ? pac k age d i m ens ions : 3.0 x 3.0 x 1 . 1 mm ? p o i n t-t o -p oi n t ra di o ? ew ? ins t ru menta t ion ? f r equency mu ltip lie r b i a s a t vd = 5 v , id = 140 m a and vg = - 0.75v ( t y p ica l ) th e triq ui nt tga 4 0 3 0-sm is a m e di um p o wer amp lifie r and mu ltip lie r fo r w i de ban d 17 ? 3 7 g h z app lications . the par t is des igned u s ing triqui nt?s 0. 1 5 u m p o w er p h emt proce s s. t he t g a403 0 - sm p r o v ides a no mina l 2 0 db s m a ll s i gna l g a in w i th 22 d b m ma ximu m output powe r . fo r 2 x and 3 x mu ltip lie r func tion, t g a403 0 - sm p r o v ides 15 dbm typ i ca l ou tput powe r @ 9 dbm pin . t h is pa r t is idea lly su ited for app lica tions such as p o i n t-t o -p oi n t ra di o, ew, in strum e nt a t i o n a n d fr eque nc y multip lie r s . eva l uation bo a r ds a r e a v a ilab l e upon req ues t. lead- free and ro hs co mp lian t b i a s a t vd = 5 v , id = 140 m a and vg = - 0.75v ( t y p ica l ) -1 5 -1 0 -5 0 5 10 15 20 25 17 21 25 2 9 3 3 3 7 f r eq uen cy ( g h z ) s 21 ( db ) -2 5 -2 0 -1 5 -1 0 -5 0 5 10 15 s1 1 & s2 2 ( d b ) s2 1 s1 1 s2 2 10 12 14 16 18 20 22 24 17 19 21 23 25 27 29 31 33 35 37 39 f r e quenc y ( g h z ) p sat ( d b m )
triquint semiconductor: www. triquint.com (972)994-8465 fax (972)994-8504 info-mmw@tqs.com 2 TGA4030-SM jul 2007 ? rev - table ii recommended operating conditions table i absolute maximum ratings 1/ symbol parameter value notes vd-vg drain to gate voltage range 8v vd drain supply voltage range 6 v vg gate supply voltage range -3 ? 0 v id drain current 400 ma |ig| gate current 1.38 ma pin input continuous wave power 20 dbm symbol parameter value vd drain voltage 5 v id drain current 140 ma vg gate voltage (typical) -0.75 v vd1 drain voltage 1 v vg1 gate voltage -1.1 v 1/ these ratings represent the maximum operable values for this device. stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device and / or affect device lifetime. these are stress ratings only , and functional operation of the device at these conditions is not implied. see bias plan on page 14 for amplifier and 2x multiplier, page 15 for 3x multiplier
triquint semiconductor: www. triquint.com (972)994-8465 fax (972)994-8504 info-mmw@tqs.com 3 TGA4030-SM jul 2007 ? rev - parameter amplifier 2x multiplier 3x multiplier units rf output frequencies 17 - 37 22 - 38 23 - 31 ghz s21, small signal gain 20 - - db s11, input return loss 10 - - db s22, output return loss 5 5 5 db psat, maximum output power 22 dbm p1db, output power @ 1 db gain compression 18 dbm imd3@ 11 dbm pout/tone 30 dbc output power @ pin = 9 dbm - 15 15 dbm conversion gain - 9 5 db gain temperature coefficient -0.04 db/ o c table iii rf characterization table bias: vd=5v, id= 140ma, vg = -0.75v (typical), t a = 25 c
triquint semiconductor: www. triquint.com (972)994-8465 fax (972)994-8504 info-mmw@tqs.com 4 TGA4030-SM jul 2007 ? rev - table iv power dissipation and thermal properties 1/ for a median life, tm, of 1e+6 hours, power dissipation is limited to pd(max) = (tchannel oc ? tbase oc)/ jc. 2/ channel operating temperature will directly affect the device median time to failure (mttf). for maximum life, it is recommended that channel temp eratures be maintained at the lowest possible levels. parameter test conditions value notes maximum power dissipation tbaseplate = 70 oc pd = 1.2 w tchannel = 150 oc tm = 1.0e+6 hrs 1/ 2/ thermal resistance, jc vd = 5v id = 140ma pd = 0.7w jc = 66.7 (oc/w) tchannel = 116 oc tm = 2.4e+7 hrs mounting temperature 30 seconds 260 oc max storage temperature -65 to 150 oc 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0 25 50 75 100 125 150 175 baseplate temp (c) power dissipated (w)
triquint semiconductor: www. triquint.com (972)994-8465 fax (972)994-8504 info-mmw@tqs.com 5 TGA4030-SM jul 2007 ? rev - measured data bias conditions: vd = 5v, idq = 140 ma, vg = -0.75 v (typical) 0 4 8 12 16 20 24 28 10 15 20 25 30 35 40 45 frequency (ghz) s21 (db) 25 c -40 c 70 c this is evaluation board s-parameter this is device s-parameter -15 -10 -5 0 5 10 15 20 25 10 15 20 25 30 35 40 45 frequency (ghz) s21 (db) -25 -20 -15 -10 -5 0 5 10 15 s11 & s22 (db)
triquint semiconductor: www. triquint.com (972)994-8465 fax (972)994-8504 info-mmw@tqs.com 6 TGA4030-SM jul 2007 ? rev - measured data bias conditions: vd = 5v, idq = 140 ma, vg = -0.75 v (typical) 10 12 14 16 18 20 22 24 17 19 21 23 25 27 29 31 33 35 37 39 frequency (ghz) psat (dbm) 10 12 14 16 18 20 22 24 17 19 21 23 25 27 29 31 33 35 37 frequency (ghz) p1db (dbm)
triquint semiconductor: www. triquint.com (972)994-8465 fax (972)994-8504 info-mmw@tqs.com 7 TGA4030-SM jul 2007 ? rev - measured data bias conditions: vd = 5v, idq = 140 ma, vg = -0.75 v (typical) 0.1 0.15 0.2 0.25 0.3 0.35 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 8 10 pin (dbm) id (a) 17ghz 21ghz 25ghz 29ghz 33ghz 37ghz 0 2 4 6 8 10 12 14 16 18 17 19 21 23 25 27 29 31 33 35 37 39 41 frequency (ghz) noise figure (db)
triquint semiconductor: www. triquint.com (972)994-8465 fax (972)994-8504 info-mmw@tqs.com 8 TGA4030-SM jul 2007 ? rev - measured data bias conditions: vd = 5v, idq = 140 ma, vg = -0.75 v (typical) 0 5 10 15 20 25 30 35 40 45 50 -3036912151821 pout/tone ( dbm ) imd3 (dbc) 27 ghz 29 ghz 31 ghz 33 ghz 35 ghz 37 ghz 39 ghz 0 10 20 30 40 50 60 -6-30369121518 pout/tone (dbm) imd3 (dbc) 17 ghz 19 ghz 21 ghz 23 ghz 25 ghz
triquint semiconductor: www. triquint.com (972)994-8465 fax (972)994-8504 info-mmw@tqs.com 9 TGA4030-SM jul 2007 ? rev - measured data bias conditions: vd = 5v, idq = 140 ma, vg = -0.75 v (typical) 10 12 14 16 18 20 22 24 26 28 30 17 19 21 23 25 27 29 31 33 35 37 frequency (ghz) toi (dbm)
triquint semiconductor: www. triquint.com (972)994-8465 fax (972)994-8504 info-mmw@tqs.com 10 TGA4030-SM jul 2007 ? rev - measured 2x multiplier data bias conditions: vd = 5 v, idq = 120 ma, vg1 = -1.1 v, pin = 9 dbm -35 -30 -25 -20 -15 -10 -5 0 5 10 15 16 18 20 22 24 26 28 30 32 34 36 38 40 42 frequency (ghz) conversion gain (db) 0 2 4 6 8 10 12 14 16 18 20 22 16 18 20 22 24 26 28 30 32 34 36 38 40 frequency (ghz) pout (dbm)
triquint semiconductor: www. triquint.com (972)994-8465 fax (972)994-8504 info-mmw@tqs.com 11 TGA4030-SM jul 2007 ? rev - measured 3x multiplier data bias conditions: vd = 5 v, vd1 = 1 v, idq = 160 ma, pin = 9 dbm 0 2 4 6 8 10 12 14 16 18 20 18 20 22 24 26 28 30 32 34 36 38 40 frequency (ghz) pout (dbm) -35 -30 -25 -20 -15 -10 -5 0 5 10 15 18 20 22 24 26 28 30 32 34 36 38 40 frequency (ghz) conversion gain (db)
triquint semiconductor: www. triquint.com (972)994-8465 fax (972)994-8504 info-mmw@tqs.com 12 TGA4030-SM jul 2007 ? rev - gaas mmic devices are susceptible to damage from electrostatic discharge. pr oper precautions should be observed during handling, assembly and test. mechanical drawing pin description pin description 1, 2, 4, 9, 11,12 gnd 7 vg 3 rf in 10 rf out 5 vg1 14 vd 6, 8, 13, 15 n/c 16 vd1 pin 1 pin 2 pin 3 pin 4 pin 5 pin 6 pin 7 pin 8 pin 12 pin 11 pin 10 pin 9 pin 16 pin 15 pin 14 pin 13 gnd
triquint semiconductor: www. triquint.com (972)994-8465 fax (972)994-8504 info-mmw@tqs.com 13 TGA4030-SM jul 2007 ? rev - dimensions are in millimeters tolerances: 0.05, unless otherwise noted
triquint semiconductor: www. triquint.com (972)994-8465 fax (972)994-8504 info-mmw@tqs.com 14 TGA4030-SM jul 2007 ? rev - evaluation board 0402 0.01 uf capacitors board material is 8 mil rogers ro4003
triquint semiconductor: www. triquint.com (972)994-8465 fax (972)994-8504 info-mmw@tqs.com 15 TGA4030-SM jul 2007 ? rev - recommended power supply connection diagram amplifier & 2x multiplier amplifier set vd = 5.0v vary (vg + vg1) to achieve id = 140ma vd vg 2x multiplier set vd = 5.0v set vg1 = -1.1v vary vg to achieve id = 120ma vd vg vg1 bias procedure powering up: set vg (starting from 0v) to ?1.5v increase vd (starting from 0v) to desired voltage 5v make vg more positive, ending up at approx ?0.75v. id ~140ma. apply rf (max input level +20dbm). powering down: remove rf reduce vd to 0v set vg to -1.5v.
triquint semiconductor: www. triquint.com (972)994-8465 fax (972)994-8504 info-mmw@tqs.com 16 TGA4030-SM jul 2007 ? rev - recommended power supply connection diagram 3x multiplier vd vg vd1 3x multiplier set vd = 5.0v set vd1 = 1.0v vary (vg + vg1) to achieve(id + id1) = 160ma
triquint semiconductor: www. triquint.com (972)994-8465 fax (972)994-8504 info-mmw@tqs.com 17 TGA4030-SM jul 2007 ? rev - ordering information part package style TGA4030-SM 3x3 qfn recommended surface mount package assembly proper esd precautions must be followed while handling packages. clean the board with acetone. rinse with alcohol. allow the circuit to fully dry. triquint recommends using a conductive solder paste for attachment. follow solder paste and reflow oven vendors? recommendations when developing a solder reflow profile. typical solder reflow profiles are listed in the table below. hand soldering is not recommended. solder paste can be applied using a stencil printer or dot placement. the volume of solder paste depends on pcb and component layout and should be well controlled to ensure consistent mechanical and electrical performance. clean the assembly with alcohol. typical solder reflow profiles reflow profile snpb pb free ramp-up rate 3 c/sec 3 c/sec activation time and temperature 60 ? 120 sec @ 140 ? 160 c 60 ? 180 sec @ 150 ? 200 c time above melting point 60 ? 150 sec 60 ? 150 sec max peak temperature 240 c 260 c time within 5 c of peak temperature 10 ? 20 sec 10 ? 20 sec ramp-down rate 4 ? 6 c/sec 4 ? 6 c/sec

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